IndiumV3, Main, Repository, bibRecord, 001406

Temperature dependence of dielectric polarization and strain behaviors for rhombohedral PIMNT single crystal with different crystallographic orientations

Identifieur interne : 001406 ( Main/Repository ); précédent : 001405; suivant : 001407

Temperature dependence of dielectric polarization and strain behaviors for rhombohedral PIMNT single crystal with different crystallographic orientations

Auteurs : RBID : Pascal:13-0017392

Descripteurs français

Pascal (Inist)
- Polarisation diélectrique, Orientation cristalline, Point Curie, Force coercitive, Effet champ électrique, Piézoélectricité, Hystérésis ferroélectrique, Transducteur, Réseau rhomboédrique, Monocristal, Indium Plomb Niobate Mixte, Titanate de plomb, Relaxeur, Système ternaire, Réseau quadratique, Composé de métal de transition, Magnoniobate de plomb.

English descriptors

KwdEn :
- Coercive force, Crystal orientation, Curie point, Dielectric polarization, Electric field effects, Ferroelectric hysteresis, Indium Lead Niobates Mixed, Lead magnesium niobates, Lead titanates, Monocrystals, Piezoelectricity, Relaxor, Ternary systems, Tetragonal lattices, Transducers, Transition element compounds, Trigonal lattices.

Abstract

In this study, the dielectric, ferroelectric and strain behaviors of 0.35Pb(In_1/2Nb_1/2)O₃-0.35Pb(Mg_1/3Nb_2/3) O₃-0.30PbTiO₃ (0.35PIN-0.35PMN-0.30PT or PIMNT35/35/30) single crystal with different crystallographic orientations were investigated as a function of temperature. The Curie temperature T_c and rhombohedral to tetragonal phase transition temperature T_rt were risen up to 188 °C and 120 °C, respectively. The coercive field E_C and remnant polarization P_r for (001) and (110) oriented crystals were found to be 5.8 kV/cm, 27.5 μC/cm² and 8.5 kV/cm, 38.7 μC/cm² at room temperature, respectively. The polarization data were obtained from the hysteresis loops of the crystal measured in a wide temperature range. The unipolar strain level was found to be 0.65% at an electric field of 32 kV/cm, with piezoelectric strain coefficient d₃₃ ∼ 2000 pC/N for (001) oriented crystal. Besides, the intermediate metastable state was induced at an electric field of 12.5 kV/cm for (1 1 0) oriented crystal, which can be utilized in large power transducers such as sonar and actuator.

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Pascal:13-0017392

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Temperature dependence of dielectric polarization and strain behaviors for rhombohedral PIMNT single crystal with different crystallographic orientations</title>
<author><name>WEI WANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences</s1>
<s2>Shanghai 201800</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 201800</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, The Hong Kong Polytechnic University, Hung Hom</s1>
<s2>Kowloon</s2>
<s3>HKG</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Hong Kong</country>
<wicri:noRegion>Kowloon</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Graduate School of the Chinese Academy of Sciences</s1>
<s2>Beijing 100049</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name>XIAOBING LI</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences</s1>
<s2>Shanghai 201800</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 201800</wicri:noRegion>
</affiliation>
</author>
<author><name>SIU WING OR</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, The Hong Kong Polytechnic University, Hung Hom</s1>
<s2>Kowloon</s2>
<s3>HKG</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Hong Kong</country>
<wicri:noRegion>Kowloon</wicri:noRegion>
</affiliation>
</author>
<author><name>CHUNG MING LEUNG</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, The Hong Kong Polytechnic University, Hung Hom</s1>
<s2>Kowloon</s2>
<s3>HKG</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Hong Kong</country>
<wicri:noRegion>Kowloon</wicri:noRegion>
</affiliation>
</author>
<author><name>JIE JIAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences</s1>
<s2>Shanghai 201800</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 201800</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Graduate School of the Chinese Academy of Sciences</s1>
<s2>Beijing 100049</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name>YAOYAO ZHANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences</s1>
<s2>Shanghai 201800</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 201800</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Graduate School of the Chinese Academy of Sciences</s1>
<s2>Beijing 100049</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
</placeName>
</affiliation>
</author>
<author><name>XIANGYONG ZHAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences</s1>
<s2>Shanghai 201800</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 201800</wicri:noRegion>
</affiliation>
</author>
<author><name>HAOSU LUO</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences</s1>
<s2>Shanghai 201800</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Shanghai 201800</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0017392</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 13-0017392 INIST</idno>
<idno type="RBID">Pascal:13-0017392</idno>
<idno type="wicri:Area/Main/Corpus">001460</idno>
<idno type="wicri:Area/Main/Repository">001406</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0925-8388</idno>
<title level="j" type="abbreviated">J. alloys compd.</title>
<title level="j" type="main">Journal of alloys and compounds</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Coercive force</term>
<term>Crystal orientation</term>
<term>Curie point</term>
<term>Dielectric polarization</term>
<term>Electric field effects</term>
<term>Ferroelectric hysteresis</term>
<term>Indium Lead Niobates Mixed</term>
<term>Lead magnesium niobates</term>
<term>Lead titanates</term>
<term>Monocrystals</term>
<term>Piezoelectricity</term>
<term>Relaxor</term>
<term>Ternary systems</term>
<term>Tetragonal lattices</term>
<term>Transducers</term>
<term>Transition element compounds</term>
<term>Trigonal lattices</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Polarisation diélectrique</term>
<term>Orientation cristalline</term>
<term>Point Curie</term>
<term>Force coercitive</term>
<term>Effet champ électrique</term>
<term>Piézoélectricité</term>
<term>Hystérésis ferroélectrique</term>
<term>Transducteur</term>
<term>Réseau rhomboédrique</term>
<term>Monocristal</term>
<term>Indium Plomb Niobate Mixte</term>
<term>Titanate de plomb</term>
<term>Relaxeur</term>
<term>Système ternaire</term>
<term>Réseau quadratique</term>
<term>Composé de métal de transition</term>
<term>Magnoniobate de plomb</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">In this study, the dielectric, ferroelectric and strain behaviors of 0.35Pb(In<sub>1/2</sub>
Nb<sub>1/2</sub>
)O<sub>3</sub>
-0.35Pb(Mg<sub>1/3</sub>
Nb<sub>2/3</sub>
) O<sub>3</sub>
-0.30PbTiO<sub>3</sub>
 (0.35PIN-0.35PMN-0.30PT or PIMNT35/35/30) single crystal with different crystallographic orientations were investigated as a function of temperature. The Curie temperature T<sub>c</sub>
 and rhombohedral to tetragonal phase transition temperature T<sub>rt</sub>
 were risen up to 188 °C and 120 °C, respectively. The coercive field E<sub>C</sub>
 and remnant polarization P<sub>r</sub>
 for (001) and (110) oriented crystals were found to be 5.8 kV/cm, 27.5 μC/cm<sup>2</sup>
 and 8.5 kV/cm, 38.7 μC/cm<sup>2</sup>
 at room temperature, respectively. The polarization data were obtained from the hysteresis loops of the crystal measured in a wide temperature range. The unipolar strain level was found to be 0.65% at an electric field of 32 kV/cm, with piezoelectric strain coefficient d<sub>33</sub>
 ∼ 2000 pC/N for (001) oriented crystal. Besides, the intermediate metastable state was induced at an electric field of 12.5 kV/cm for (1 1 0) oriented crystal, which can be utilized in large power transducers such as sonar and actuator.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0925-8388</s0>
</fA01>
<fA03 i2="1"><s0>J. alloys compd.</s0>
</fA03>
<fA05><s2>545</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Temperature dependence of dielectric polarization and strain behaviors for rhombohedral PIMNT single crystal with different crystallographic orientations</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>WEI WANG</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>XIAOBING LI</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>SIU WING OR</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>CHUNG MING LEUNG</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>JIE JIAO</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>YAOYAO ZHANG</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>XIANGYONG ZHAO</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>HAOSU LUO</s1>
</fA11>
<fA14 i1="01"><s1>Key Laboratory of Inorganic Functional Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences</s1>
<s2>Shanghai 201800</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Electrical Engineering, The Hong Kong Polytechnic University, Hung Hom</s1>
<s2>Kowloon</s2>
<s3>HKG</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Graduate School of the Chinese Academy of Sciences</s1>
<s2>Beijing 100049</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA20><s1>57-62</s1>
</fA20>
<fA21><s1>2012</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>1151</s2>
<s5>354000505440150110</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>31 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0017392</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of alloys and compounds</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In this study, the dielectric, ferroelectric and strain behaviors of 0.35Pb(In<sub>1/2</sub>
Nb<sub>1/2</sub>
)O<sub>3</sub>
-0.35Pb(Mg<sub>1/3</sub>
Nb<sub>2/3</sub>
) O<sub>3</sub>
-0.30PbTiO<sub>3</sub>
 (0.35PIN-0.35PMN-0.30PT or PIMNT35/35/30) single crystal with different crystallographic orientations were investigated as a function of temperature. The Curie temperature T<sub>c</sub>
 and rhombohedral to tetragonal phase transition temperature T<sub>rt</sub>
 were risen up to 188 °C and 120 °C, respectively. The coercive field E<sub>C</sub>
 and remnant polarization P<sub>r</sub>
 for (001) and (110) oriented crystals were found to be 5.8 kV/cm, 27.5 μC/cm<sup>2</sup>
 and 8.5 kV/cm, 38.7 μC/cm<sup>2</sup>
 at room temperature, respectively. The polarization data were obtained from the hysteresis loops of the crystal measured in a wide temperature range. The unipolar strain level was found to be 0.65% at an electric field of 32 kV/cm, with piezoelectric strain coefficient d<sub>33</sub>
 ∼ 2000 pC/N for (001) oriented crystal. Besides, the intermediate metastable state was induced at an electric field of 12.5 kV/cm for (1 1 0) oriented crystal, which can be utilized in large power transducers such as sonar and actuator.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70G65</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70G80D</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Polarisation diélectrique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Dielectric polarization</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Orientation cristalline</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Crystal orientation</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Point Curie</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Curie point</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Force coercitive</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Coercive force</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Effet champ électrique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Electric field effects</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Piézoélectricité</s0>
<s5>08</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Piezoelectricity</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Hystérésis ferroélectrique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Ferroelectric hysteresis</s0>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Histéresis ferroeléctrica</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Transducteur</s0>
<s5>11</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Transducers</s0>
<s5>11</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Réseau rhomboédrique</s0>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Trigonal lattices</s0>
<s5>15</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Monocristal</s0>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Monocrystals</s0>
<s5>16</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Indium Plomb Niobate Mixte</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Indium Lead Niobates Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Mixto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>17</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Titanate de plomb</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Lead titanates</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Relaxeur</s0>
<s5>19</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Relaxor</s0>
<s5>19</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Système ternaire</s0>
<s5>20</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Ternary systems</s0>
<s5>20</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Réseau quadratique</s0>
<s5>21</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Tetragonal lattices</s0>
<s5>21</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Composé de métal de transition</s0>
<s5>48</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Transition element compounds</s0>
<s5>48</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Magnoniobate de plomb</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Lead magnesium niobates</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="17" i2="3" l="SPA"><s0>Niobato de Magnesio y plomo</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21><s1>007</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Temperature dependence of dielectric polarization and strain behaviors for rhombohedral PIMNT single crystal with different crystallographic orientations

Temperature dependence of dielectric polarization and strain behaviors for rhombohedral PIMNT single crystal with different crystallographic orientations

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